发明申请
- 专利标题: Method for preventing metalorganic precursor penetration into porous dielectrics
- 专利标题(中): 防止金属有机前体渗入多孔电介质的方法
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申请号: US10897479申请日: 2004-07-23
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公开(公告)号: US20050148209A1公开(公告)日: 2005-07-07
- 发明人: Karen Chu , Anil Vijayendran , Michal Danek
- 申请人: Karen Chu , Anil Vijayendran , Michal Danek
- 主分类号: H01L21/26
- IPC分类号: H01L21/26 ; H01L21/285 ; H01L21/768 ; H01L29/00
摘要:
Methods and structures are provided for conformal lining of dual damascene structures in semiconductor devices that contain porous or low k dielectrics. Features, such as trenches and contact vias are formed in the dielectrics. The features are subjected to low-power plasma predeposition treatment to irregularities on the porous surfaces and/or reactively form an permeation barrier before a diffusion barrier material is deposited on the feature. The diffusion barrier may, for example, be deposited by CVD using metalorganic vapor reagents. The feature is then filled with copper metal and further processed to complete a dual damascene interconnect. The plasma predeposition treatment advantageously reduces the amount of permeation of the metalorganic reagent into the interlayer dielectric.
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