发明申请
US20050153537A1 Novel nitride barrier layer to prevent metal (Cu) leakage issue in a dual damascene structure
有权
新型氮化物阻挡层，以防止双镶嵌结构中的金属（Cu）泄漏问题
- 专利标题： Novel nitride barrier layer to prevent metal (Cu) leakage issue in a dual damascene structure
- 专利标题（中）： 新型氮化物阻挡层，以防止双镶嵌结构中的金属（Cu）泄漏问题
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申请号： US10753637申请日： 2004-01-08
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公开(公告)号： US20050153537A1公开(公告)日： 2005-07-14
- 发明人: Yi-Lung Cheng , Ying-Lung Wang
- 申请人： Yi-Lung Cheng , Ying-Lung Wang
- 专利权人： Taiwan Semiconductor Manufacturing Co.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co.
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/768 ; H01L23/52
摘要：
A method for forming a composite barrier layer that also functions as an etch stop in a damascene process is disclosed. A SiC layer is deposited on a substrate in a CVD process chamber followed by deposition of a silicon nitride layer to complete the composite barrier layer. The SiC layer exhibits excellent adhesion to a copper layer in the substrate and is formed by a method that avoids reactive Si+4 species and thereby prevents CuSiX formation. The silicon nitride layer thickness is sufficient to provide superior barrier capability to metal ions but is kept as thin as possible to minimize the dielectric constant of the composite barrier layer. The composite barrier layer provides excellent resistance to copper oxidation during oxygen ashing steps and enables a copper layer to be fabricated with a lower leakage current than when a conventional silicon nitride barrier layer is employed.
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