发明申请
- 专利标题： Protecting Silicon Germanium Sidewall with Silicon for Strained Silicon/Silicon Germanium MOSFETs
- 专利标题（中）： 用硅保护硅锗侧壁，用于应变硅/硅锗MOSFET
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申请号： US10707840申请日： 2004-01-16
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公开(公告)号： US20050156154A1公开(公告)日： 2005-07-21
- 发明人: Huilong Zhu , Bruce Doris , Dan Mocuta
- 申请人： Huilong Zhu , Bruce Doris , Dan Mocuta
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/06 ; H01L29/10 ; H01L29/78 ; H01L29/786
摘要：
Raised Si/SiGe source and drain regions include epitaxially grown silicon on SiGe sidewalls. The epi silicon prevents adverse effects of Ge during silicidation, including Ge out diffusion and silicide line breakage. The Si also increases the active area.