发明申请
US20050156245A1 Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer
审中-公开
在半导体层中形成的半导体器件，其布置在基板上，绝缘膜和空腔中的一个介于基板和半导体层之间
- 专利标题： Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer
- 专利标题（中）： 在半导体层中形成的半导体器件，其布置在基板上，绝缘膜和空腔中的一个介于基板和半导体层之间
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申请号： US11073617申请日： 2005-03-08
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公开(公告)号： US20050156245A1公开(公告)日： 2005-07-21
- 发明人: Tsutomu Sato , Hajime Nagano , Ichiro Mizushima , Takashi Yamada , Yuso Udo , Shinichi Nitta
- 申请人： Tsutomu Sato , Hajime Nagano , Ichiro Mizushima , Takashi Yamada , Yuso Udo , Shinichi Nitta
- 优先权： JP2001-398184 20011227
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L27/12 ; H01L27/10
摘要：
A semiconductor device according to an aspect of the present invention comprises a first semiconductor layer and a plurality of second semiconductor layers. The first semiconductor layer is formed in a first region of a semiconductor substrate with one of an insulating film and a cavity interposed between the semiconductor substrate and the first semiconductor layer. The plurality of second semiconductor layers is formed in second regions of the semiconductor substrate.
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