发明申请
US20050158654A1 Reducing outgassing of reactive material upon exposure of photolithography resists
审中-公开
在曝光光刻抗蚀剂时减少反应性材料的除气
- 专利标题： Reducing outgassing of reactive material upon exposure of photolithography resists
- 专利标题（中）： 在曝光光刻抗蚀剂时减少反应性材料的除气
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申请号： US10761842申请日： 2004-01-21
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公开(公告)号： US20050158654A1公开(公告)日： 2005-07-21
- 发明人: Wang Yueh , Ernisse Putna
- 申请人： Wang Yueh , Ernisse Putna
- 主分类号： G03C1/492
- IPC分类号： G03C1/492 ; G03F7/004
摘要：
Outgassing of reactive material upon exposure of a photolithographic resist may be reduced. Outgassing may foul optical components of the photolithographic system. In one embodiment, a ring compound with iodine or sulfur may be formed. The ring compound may be more resistant to the generation of reactive outgassing components.
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