- 专利标题: Resistor and method for fabricating the same
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申请号: US11037963申请日: 2005-01-18
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公开(公告)号: US20050158960A1公开(公告)日: 2005-07-21
- 发明人: Masato Hashimoto , Yoshiro Morimoto , Akio Fukuoka , Hiroaki Kaito , Hiroyuki Saikawa , Toshiki Matsukawa , Junichi Hayase
- 申请人: Masato Hashimoto , Yoshiro Morimoto , Akio Fukuoka , Hiroaki Kaito , Hiroyuki Saikawa , Toshiki Matsukawa , Junichi Hayase
- 优先权: JP2000-7407 20000117; JP2000-43913 20000222; JP2000-45507 20000223
- 主分类号: H01C1/14
- IPC分类号: H01C1/14 ; H01C1/148 ; H01C7/00 ; H01C17/00 ; H01C17/075 ; H01C17/28 ; H01L21/20
摘要:
An inexpensive fine resistor which do not require dimensional classifications of discrete substrates, eliminating a process of replacing a mask according to a dimensional ranking of each discrete substrate as in the prior art. The resistor includes discrete substrate made into pieces by dividing an insulated substrate sheet along a first slit dividing portion and a second dividing portion perpendicular to the first dividing portion; top electrode layer formed on a top face of discrete substrate; resistor layer formed such that a part of resistor layer overlaps top electrode layer; protective layers formed so as to cover resistor layer; side electrode layer formed on a side face of discrete substrate such that side electrode layer is electrically coupled to top electrode layer.
公开/授权文献
- US07188404B2 Method for fabricating a resistor 公开/授权日:2007-03-13
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