发明申请
- 专利标题: Method for forming semiconductor device
- 专利标题(中): 半导体器件形成方法
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申请号: US11090885申请日: 2005-03-28
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公开(公告)号: US20050164494A1公开(公告)日: 2005-07-28
- 发明人: Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
- 申请人: Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
- 申请人地址: JP Osaka
- 专利权人: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址: JP Osaka
- 优先权: JP2003-175883 20030620
- 主分类号: G03F7/00
- IPC分类号: G03F7/00 ; H01L21/027 ; H01L21/312 ; H01L21/316 ; H01L21/44 ; H01L21/4763 ; H01L21/768
摘要:
A method for forming a semiconductor device includes the steps of forming a flowable film made of an insulating material with flowability; forming a first concave portion in the flowable film through transfer of a convex portion of a pressing face of a pressing member by pressing the pressing member against the flowable film; forming a solidified film having the first concave portion by solidifying the flowable film through annealing at a first temperature with the pressing member pressed against the flowable film; forming a burnt film having the first concave portion by burning the solidified film through annealing at a second temperature higher than the first temperature; forming a second concave portion connected at least to the first concave portion in the burnt film by forming, on the burnt film, a mask having an opening for forming the second concave portion and etching the burnt film by using the mask; and forming a plug and a metal interconnect by filing the first concave portion and the second concave portion of the burnt film with a conductive film.
公开/授权文献
- US07291554B2 Method for forming semiconductor device 公开/授权日:2007-11-06