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发明申请
US20050166004A1 Method for fetching data from a non-volatile memory in an integrated circuit and corresponding integrated circuit 失效
用于从集成电路中的非易失性存储器和相应的集成电路获取数据的方法

Method for fetching data from a non-volatile memory in an integrated circuit and corresponding integrated circuit
摘要：
The method uses an integrated circuit comprising a processor (603), a non-volatile memory (602), especially a flash memory, a system clock and an interface (605), which is connected on the one side to the (processor (602) and on the other side to the non-volatile memory (602). When the address (ba[ ]) provided by the processor (603) has changed, the interface (605) leads the address (ba[ ]) to the non-volatile memory (602), creates a strobe signal (CL; DCR) within the system clock cycle during which the address (ba[ ]) has changed and directs it to the non-volatile memory (602). As soon as the data in the non-volatile memory (602) corresponding to the address (ba[ ]) are available the data will be directed to the processor (603). Thereby it is possible to get on the integrated circuit the highest data throughput according to the flash memory (602) access time and a minimized chip area at the same time.
摘要（中）：

该方法使用包括处理器（603），非易失性存储器（602），特别是闪存，系统时钟和接口（605）的集成电路，其在一侧连接到（处理器（602） ）并且在另一侧到非易失性存储器（602），当由处理器（603）提供的地址（ba []）改变时，接口（605）将地址（ba []）引导到非易失性存储器 非易失性存储器（602）在地址（ba []）已经改变的系统时钟周期内产生选通信号（CL; DCR），并将其引导到非易失性存储器（602）。 在对应于地址（ba []）的非易失性存储器（602）中，数据将被引导到处理器（603），从而可以根据闪存将集成电路的数据吞吐量提高到最高 存储器（602）访问时间和最小化的芯片区域。

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