发明申请
- 专利标题： Semiconductor wafer and a method for manufacturing a semiconductor wafer
- 专利标题（中）： 半导体晶片及其制造方法
-
申请号： US11077039申请日： 2005-03-11
-
公开(公告)号： US20050167857A1公开(公告)日： 2005-08-04
- 发明人: Masao Iwase , Soichi Nadahara
- 申请人： Masao Iwase , Soichi Nadahara
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 优先权： JPP2002-305330 20021021; JPP2003-092737 20030328
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L23/544 ; H01L29/06
摘要：
A semiconductor wafer includes (a) a first principal side and a second principal side opposite to each other, (b) a first bevel contour and a second bevel contour provided at an outer periphery of the first principal side and the second principal side, (c) a first recess formed in the first bevel contour, and (d) a first type of ID mark configured by a protruding dot provided on a bottom face of the first recess.
公开/授权文献
信息查询
IPC分类:
