发明申请
- 专利标题: Semiconductor laser apparatus
- 专利标题(中): 半导体激光装置
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申请号: US11018573申请日: 2004-12-22
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公开(公告)号: US20050169335A1公开(公告)日: 2005-08-04
- 发明人: Xin Gao , Yujin Zheng
- 申请人: Xin Gao , Yujin Zheng
- 专利权人: HAMAMATSU PHOTONICS K.K.
- 当前专利权人: HAMAMATSU PHOTONICS K.K.
- 优先权: JPP2003-427804 20031224
- 主分类号: H01S3/08
- IPC分类号: H01S3/08 ; H01S5/00 ; H01S5/028 ; H01S5/10 ; H01S5/40
摘要:
The present invention relates to a semiconductor laser apparatus capable of reducing a spread angle of an emission light with downsizing. The semiconductor laser apparatus has an active region between a first end surface and a second end surface. A first reflection structure and a partial reflection structure are provided on the first end surface side, and the end surface of the active region is divided into a total reflection region and a partial reflection region in combination with these first reflection structure and partial reflection structure. A laser resonator is constituted by the first reflection structure and partial reflection structure. On the second end surface side, a second reflection structure is provided to be positioned on the way of a resonance optical path of the laser resonator. While the light emitted within the active region propagates on a resonance optical path, an induction emission is produced, and thereby the semiconductor laser carries out a laser oscillation. As a result, among the light arrived at the partial reflection structure, the part having transmitted through the partial reflection structure is outputted outside the semiconductor laser apparatus.
公开/授权文献
- US07197058B2 Semiconductor laser apparatus 公开/授权日:2007-03-27
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