There are provided a ferroelectric RAM (Random Access Memory) device and a control method thereof. In the device, a data input buffer circuit senses a transition of input data and generates a data transition detection signal. Further, a plate pulse generator generates a single pulse to store first logic data among applied data at an enable section of a plate line, and to store second logic data opposite to the first logic data at a disable section of the plate line, where the single pulse enables the plate line connected to a memory cell in response to the data transition detection signal and then disables it after lapse of a given time. Thus, a stabilized write operation can be provided and a control of the ferroelectric RAM device can be simplified.