发明申请
- 专利标题： Phase-change memory device and method of manufacturing the same
- 专利标题（中）： 相变存储器件及其制造方法
-
申请号： US11028202申请日： 2005-01-04
-
公开(公告)号： US20050174861A1公开(公告)日： 2005-08-11
- 发明人: Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
- 申请人： Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
- 优先权： KR10-2004-0000380 20040105
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; G11C29/00 ; H01L27/10 ; H01L27/24 ; H01L45/00
摘要：
In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.