发明申请
- 专利标题: Method of manufacturing field emitter
- 专利标题(中): 制造场发射体的方法
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申请号: US11048809申请日: 2005-02-03
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公开(公告)号: US20050176336A1公开(公告)日: 2005-08-11
- 发明人: Sang-Hyun Lee , Jeong-Hee Lee , Shang-Hyeun Park , Tae-Won Jeong , Jung-Na Heo , Won-Seok Kim
- 申请人: Sang-Hyun Lee , Jeong-Hee Lee , Shang-Hyeun Park , Tae-Won Jeong , Jung-Na Heo , Won-Seok Kim
- 优先权: KR10-2004-0007524 20040205
- 主分类号: H01J9/02
- IPC分类号: H01J9/02 ; H01J1/304 ; H01J9/04 ; H01J9/12
摘要:
In a method of manufacturing a field emitter, a patterned conductive layer is formed on a substrate, an upper surface of the conductive layer is coated with a mixture of a field emission material and metal powder, the mixture is thermally treated to improve adhesion of the mixture to the conductive layer, and a field emission material and a metal deposited on a portion of the substrate other than the conductive layer are removed. Accordingly, the lifespan and field emission characteristic of the field emitter are greatly improved, and a large area field emitter having excellent characteristics that cannot be realized in the conventional art is fabricated.
公开/授权文献
- US07507135B2 Method of manufacturing field emitter 公开/授权日:2009-03-24
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