发明申请
- 专利标题： Junction-isolated depletion mode ferroelectric memory devices and systems
- 专利标题（中）： 结隔离耗尽型铁电存储器件和系统
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申请号： US11098747申请日： 2005-04-04
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公开(公告)号： US20050179070A1公开(公告)日： 2005-08-18
- 发明人: Craig Salling , Brian Huber
- 申请人： Craig Salling , Brian Huber
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： G11C11/22
- IPC分类号： G11C11/22 ; H01L21/8246 ; H01L27/115 ; H01L31/062 ; H01L31/113
摘要：
Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells for memory devices and electronic systems. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb.
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