发明申请
- 专利标题: Manufacturing method and manufacturing apparatus for semiconductor device
- 专利标题(中): 半导体装置的制造方法和制造装置
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申请号: US11048780申请日: 2005-02-03
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公开(公告)号: US20050183295A1公开(公告)日: 2005-08-25
- 发明人: Takahiro Imai
- 申请人: Takahiro Imai
- 申请人地址: JP Tokyo
- 专利权人: SEIKO EPSON CORPORATION
- 当前专利权人: SEIKO EPSON CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2004-030861 20040206
- 主分类号: H01L21/56
- IPC分类号: H01L21/56 ; H01L21/58 ; H01L21/60 ; H01L23/495
摘要:
A formation surface of electrodes and a formation surface of leads are imaged along an axis which intersects an XY plane at right angles. A projected image of the formation surface of the electrodes and the formation surface of the leads is obtained, the projected image being projected onto a plane which intersects the Z axis at right angles. A difference between an image of one of the electrodes and an image of one of the leads in the projected image is calculated. A deformation value of at least one of a substrate and a semiconductor chip due to expansion or shrinkage is calculated, the deformation value being necessary for eliminating the difference. A change in temperature of at least one of the substrate and the semiconductor chip is calculated the change in temperature being necessary for obtaining the deformation value. The temperature of at least one of the substrate and the semiconductor chip is changed based on the change in temperature.
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