发明申请
- 专利标题： Phase change memory cell and method of its manufacture
- 专利标题（中）： 相变存储单元及其制造方法
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申请号： US10783498申请日： 2004-02-20
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公开(公告)号： US20050184282A1公开(公告)日： 2005-08-25
- 发明人: Li-Shyue Lai , Denny Tang , Wen-chin Lin
- 申请人： Li-Shyue Lai , Denny Tang , Wen-chin Lin
- 主分类号： H01L27/24
- IPC分类号： H01L27/24 ; H01L45/00 ; H01L47/00
摘要：
A phase change memory cell includes a resistive heating element for a phase change body that can expeditiously and efficiently heat a portion of the body with the voltage and current usable with MOSFETs. This is achieved through minimizing the area of an interface between a conductive layer and the body by permitting photolithographic techniques to define one dimension of the interface and thin film deposition techniques to define the other dimension.
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