发明申请
- 专利标题： Oxygen ion conductor device, method for fabricating oxygen ion conductor device, and oxygen concentration control system
- 专利标题（中）： 氧离子导体装置，氧离子导体装置的制造方法以及氧浓度控制系统
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申请号： US11064999申请日： 2005-02-25
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公开(公告)号： US20050184363A1公开(公告)日： 2005-08-25
- 发明人: Hideo Torii , Eiji Fujii , Taku Hirasawa , Atsushi Tomozawa
- 申请人： Hideo Torii , Eiji Fujii , Taku Hirasawa , Atsushi Tomozawa
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 优先权： JP2004-049381 20040225
- 主分类号： C01B13/02
- IPC分类号： C01B13/02 ; C25D1/00 ; H01L21/31 ; H01L23/58
摘要：
A first electrode thin film is formed on an upper surface of the oxygen ion conductive thin film so as to have a through hole. A resistor is formed on part of the upper surface of the oxygen conductive thin film located in the through hole. Thus, the oxygen ion conductive thin film can be directly heated by the resistor, so that oxygen ions can be speedily transferred with a low power. Therefore, the oxygen ion conductivity of the oxygen ion conductive thin film can be improved.
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