发明申请
US20050186339A1 Methods and apparatuses promoting adhesion of dielectric barrier film to copper
审中-公开
促进介电阻挡膜对铜的粘附的方法和装置
- 专利标题: Methods and apparatuses promoting adhesion of dielectric barrier film to copper
- 专利标题(中): 促进介电阻挡膜对铜的粘附的方法和装置
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申请号: US10783316申请日: 2004-02-20
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公开(公告)号: US20050186339A1公开(公告)日: 2005-08-25
- 发明人: Nagarajan Rajagopalan , Bok Kim , Lester D'Cruz , Zhenjiang Cui , Girish Dixit , Visweswaren Sivaramakrishnan , Hichem M'Saad , Meiyee Shek , Li-Qun Xia
- 申请人: Nagarajan Rajagopalan , Bok Kim , Lester D'Cruz , Zhenjiang Cui , Girish Dixit , Visweswaren Sivaramakrishnan , Hichem M'Saad , Meiyee Shek , Li-Qun Xia
- 申请人地址: US CA Santa Clara
- 专利权人: APPLIED MATERIALS, INC., A Delaware corporation
- 当前专利权人: APPLIED MATERIALS, INC., A Delaware corporation
- 当前专利权人地址: US CA Santa Clara
- 主分类号: C23C16/02
- IPC分类号: C23C16/02 ; C23C16/42 ; C23C16/52 ; H01L21/768 ; C23C16/00 ; H05H1/24
摘要:
Adhesion between a copper metallization layer and a dielectric barrier film may be promoted by stabilizing a flow of a silicon-containing precursor in a divert line leading to the chamber exhaust. The stabilized gas flow is then introduced to the processing chamber to precisely form a silicide layer over the copper. This silicidation step creates a network of strong Cu—Si bonds that prevent delamination of the barrier layer, while not substantially altering the sheet resistance and other electrical properties of the resulting metallization structure.
公开/授权文献
- US1274319A Ship-propulsion installation. 公开/授权日:1918-07-30