发明申请
- 专利标题: Methods for transferring a thin layer from a wafer having a buffer layer
- 专利标题(中): 从具有缓冲层的晶片转移薄层的方法
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申请号: US11032844申请日: 2005-01-10
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公开(公告)号: US20050191825A1公开(公告)日: 2005-09-01
- 发明人: Bruno Ghyselen , Cecile Aulnette , Benedite Osternaud , Nicolas Daval
- 申请人: Bruno Ghyselen , Cecile Aulnette , Benedite Osternaud , Nicolas Daval
- 优先权: FR0208600 20020907
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/20 ; H01L21/762 ; H01L27/12 ; H01L21/00 ; C30B1/00 ; H01L21/30 ; H01L21/36 ; H01L21/46 ; H01L21/84
摘要:
A method for transferring a layer of semiconductor material from a wafer is described. The wafer includes a support substrate and an upper surface that includes a buffer layer of a material having a first lattice parameter. In an embodiment, the technique includes growing a strained layer on the buffer layer. The strained layer is made of a semiconductor material having a nominal lattice parameter that is substantially different from the first lattice parameter, and it is grown to a thickness that is sufficiently thin to avoid relaxation of the strain therein. The method also includes growing a relaxed layer on the strained layer. The relaxed layer is made of silicon and has a concentration of at least one other semiconductor material that has a nominal lattice parameter that is substantially identical to the first lattice parameter. The technique also includes providing a weakened zone in the buffer layer, and supplying energy to detach a structure at the weakened zone. The structure includes a portion of the buffer layer, the strained layer and the relaxed layer. Lastly; the method includes enriching the concentration of the at least one other semiconductor material in the relaxed layer of the structure.