发明申请
US20050195673A1 Magnetic random access memory having memory cells configured by use of tunneling magnetoresistive elements
审中-公开
具有通过使用隧道磁阻元件配置存储单元的磁性随机存取存储器
- 专利标题： Magnetic random access memory having memory cells configured by use of tunneling magnetoresistive elements
- 专利标题（中）： 具有通过使用隧道磁阻元件配置存储单元的磁性随机存取存储器
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申请号： US10617666申请日： 2003-07-14
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公开(公告)号： US20050195673A1公开(公告)日： 2005-09-08
- 发明人: Yoshiaki Asao , Yoshihisa Iwata
- 申请人： Yoshiaki Asao , Yoshihisa Iwata
- 优先权： JP2002-206171 20020715
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A magnetic random access memory includes memory cells each including a TMR element and a selection element, and a read circuit which reads storage information from the TMR element by applying read voltage to a selected one of the memory cells and causing a current to flow through the TMR element via the selection element. The read circuit includes a voltage setting section used to apply voltage which makes a resistance variation rate of the TMR element substantially equal to half a resistance variation rate thereof obtained when 0 V is applied across the TMR element to the TMR element at the information read time.
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