发明申请
US20050199907A1 STRUCTURE AND METHOD OF FORMING A BIPOLAR TRANSISTOR HAVING A VOID BETWEEN EMITTER AND EXTRINSIC BASE
失效
形成具有发射极和极端基底之间的空穴的双极晶体管的结构和方法
- 专利标题： STRUCTURE AND METHOD OF FORMING A BIPOLAR TRANSISTOR HAVING A VOID BETWEEN EMITTER AND EXTRINSIC BASE
- 专利标题（中）： 形成具有发射极和极端基底之间的空穴的双极晶体管的结构和方法
-
申请号： US10708563申请日： 2004-03-11
-
公开(公告)号： US20050199907A1公开(公告)日： 2005-09-15
- 发明人: Rama Divakaruni , Gregory Freeman , Marwan Khater , William Tonti
- 申请人： Rama Divakaruni , Gregory Freeman , Marwan Khater , William Tonti
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L27/06 ; H01L27/082 ; H01L29/06 ; H01L29/737 ; H01L31/072
摘要：
Structure and a method are provided for making a bipolar transistor, the bipolar transistor including a collector, an intrinsic base overlying the collector, an emitter overlying the intrinsic base, and an extrinsic base spaced from the emitter by a gap, the gap including at least one of an air gap and a vacuum void.
公开/授权文献
信息查询
IPC分类:
