发明申请
- 专利标题: Semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件
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申请号: US11104501申请日: 2005-04-13
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公开(公告)号: US20050201186A1公开(公告)日: 2005-09-15
- 发明人: Masafumi Yamazaki , Toshiya Uchida
- 申请人: Masafumi Yamazaki , Toshiya Uchida
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 主分类号: G11C8/00
- IPC分类号: G11C8/00 ; G11C11/4074 ; G11C11/408 ; H02M3/07
摘要:
A semiconductor integrated circuit device has a boosted-voltage power-supply circuit generating a boosted voltage, an internal circuit being driven with the boosted voltage, and a control circuit controlling the internal circuit by receiving the boosted voltage. The boosted-voltage power-supply circuit has a first output terminal for the internal circuit, and a second output terminal for the control circuit. The boosted voltage output from the second terminal has a specified level regardless of variation in the boosted voltage being output from the first terminal.
公开/授权文献
- US07113027B2 Semiconductor integrated circuit device 公开/授权日:2006-09-26