发明申请
- 专利标题: Method for making a high power semiconductor laser diode
- 专利标题(中): 制造大功率半导体激光二极管的方法
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申请号: US11040246申请日: 2005-01-21
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公开(公告)号: US20050201438A1公开(公告)日: 2005-09-15
- 发明人: Silke Traut , Berthold Schmidt , Boris Sverdlov , Achim Thies
- 申请人: Silke Traut , Berthold Schmidt , Boris Sverdlov , Achim Thies
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L33/00 ; H01S3/098 ; H01S3/10 ; H01S3/20 ; H01S5/00 ; H01S5/22
摘要:
Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement concerns a method of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it's efficiency. This novel effect is provided by a structure comprising CIG—for Complex Index Guiding—elements on top of the laser diode, said CIG being established by fabricating CIG elements consisting of one or a plurality of layers and containing at least one layer which provides the optical absorption of undesired modes of the lasing wavelength. This CIG preferably contains an insulating layer as a first contact layer to the semiconductor. The CIG elements are manufactured by a selected sequence of processing steps, in particular several masking steps, and are specifically shaped, both in thickness and coverage of the lasers semiconductor body, to provide desired suppression characteristics. Further, the CIG elements may be combined with the contact layer usually providing the electrical input power to the laser diode.
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