发明申请
- 专利标题： Manufacturing and testing of electrostatic discharge protection circuits
- 专利标题（中）： 静电放电保护电路的制造和测试
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申请号： US11124439申请日： 2005-05-05
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公开(公告)号： US20050202577A1公开(公告)日： 2005-09-15
- 发明人: Richard Williams , Michael Cornell , Wai Chan
- 申请人： Richard Williams , Michael Cornell , Wai Chan
- 主分类号： H01L23/485
- IPC分类号： H01L23/485 ; H01L23/495 ; H01L23/58 ; H01L23/62 ; H01L27/02 ; H01L29/78 ; H01L21/66
摘要：
A semiconductor die has a bonding pad for a MOSFET such as a power MOSFET and a separate bonding pad for ESD protection circuitry. Connecting the bonding pads together makes the ESD protection circuitry functional to protect the MOSFET. Before connecting the bonding pads together, the ESD protection circuitry and/or the MOSFET can be separately tested. A voltage higher than functioning ESD protection circuitry would permit can be used when testing the MOSFET. A packaging process such as wire bonding or attaching the die to a substrate in a flip-chip package can connect the bonding pads after testing.