发明申请
- 专利标题： Method and apparatus for chemical mechanical polishing
- 专利标题（中）： 化学机械抛光方法和装置
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申请号： US11133195申请日： 2005-05-20
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公开(公告)号： US20050205433A1公开(公告)日： 2005-09-22
- 发明人: Toshiro Doi , Takashi Fujita
- 申请人： Toshiro Doi , Takashi Fujita
- 申请人地址： JP Tokyo JP Tokorozawa-shi
- 专利权人： Tokyo Seimitsu Co., Ltd.,Toshiro Doi
- 当前专利权人： Tokyo Seimitsu Co., Ltd.,Toshiro Doi
- 当前专利权人地址： JP Tokyo JP Tokorozawa-shi
- 优先权： JP2002-142632 20020517
- 主分类号： B24B37/00
- IPC分类号： B24B37/00 ; H01L21/304 ; B23H5/06
摘要：
A polishing device is hermetically accommodated in a chamber containing an atmosphere having a composition different from the ambient air, so that the atmosphere around the polishing device is altered into the composition different from the ambient air, and voltage is applied between a wafer and a polishing pad to polish the wafer with an electrolytic effect. The polishing device has the atmosphere containing extremely less oxygen, preventing a surface of the wafer from oxidation and thereby providing a constant polishing rate.
公开/授权文献
- US07785175B2 Method and apparatus for chemical mechanical polishing 公开/授权日：2010-08-31
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