发明申请
- 专利标题： Method of depositing a tantalum nitride / tantalum diffusion barrier layer system
- 专利标题（中）： 沉积氮化钽/钽扩散阻挡层体系的方法
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申请号： US11069348申请日： 2005-02-28
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公开(公告)号： US20050208767A1公开(公告)日： 2005-09-22
- 发明人: Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
- 申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 主分类号： C23C14/06
- IPC分类号： C23C14/06 ; C23C14/16 ; C23C14/32 ; H01L21/285 ; H01L21/44 ; H01L21/4763 ; H01L21/768
摘要：
We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩcm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface to form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.
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