发明申请
US20050208781A1 CRACKSTOP WITH RELEASE LAYER FOR CRACK CONTROL IN SEMICONDUCTORS
失效
具有释放层的CRACKSTOP用于半导体中的裂纹控制
- 专利标题: CRACKSTOP WITH RELEASE LAYER FOR CRACK CONTROL IN SEMICONDUCTORS
- 专利标题(中): 具有释放层的CRACKSTOP用于半导体中的裂纹控制
-
申请号: US10708735申请日: 2004-03-22
-
公开(公告)号: US20050208781A1公开(公告)日: 2005-09-22
- 发明人: John Fitzsimmons , Michael Lane , Vincent McGahay , Thomas Shaw , Anthony Stamper
- 申请人: John Fitzsimmons , Michael Lane , Vincent McGahay , Thomas Shaw , Anthony Stamper
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: B05D1/02
- IPC分类号: B05D1/02 ; H01L21/78 ; H01L23/00
摘要:
Methods of forming and the integrated circuit device structure formed having vertical interfaces adjacent an existing crack stop around a perimeter of a chip, whereby the vertical interface controls cracks generated during side processing of the device such as dicing, and in service from penetrating the crack stop. The vertical interface is comprised of a material that prevents cracks from damaging the crack stop by deflecting cracks away from penetrating the crack stop, or by absorbing the generated crack energies. Alternatively, the vertical interface may be a material that allows advancing cracks to lose enough energy such that they become incapable of penetrating the crack stop. The present vertical interfaces can be implemented in a number of ways such as, vertical spacers of release material, vertical trenches of release material or vertical channels of the release material.