发明申请
- 专利标题： Method for cleaning a process chamber
- 专利标题（中）： 清洁处理室的方法
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申请号： US11132895申请日： 2005-05-19
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公开(公告)号： US20050211265A1公开(公告)日： 2005-09-29
- 发明人: Yi Zheng , Vinita Singh , Srinivas Nemani , Chen-an Chen , Ju-Hyung Lee , Shankar Venkataraman
- 申请人： Yi Zheng , Vinita Singh , Srinivas Nemani , Chen-an Chen , Ju-Hyung Lee , Shankar Venkataraman
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 主分类号： B08B7/00
- IPC分类号： B08B7/00 ; C23C16/44 ; B08B6/00
摘要：
Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.