发明申请
- 专利标题: Method of manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US11090839申请日: 2005-03-25
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公开(公告)号: US20050221580A1公开(公告)日: 2005-10-06
- 发明人: Kenji Saitou , Kenichi Hidaka
- 申请人: Kenji Saitou , Kenichi Hidaka
- 申请人地址: JP Kawasaki
- 专利权人: NEC Electronics Corporation
- 当前专利权人: NEC Electronics Corporation
- 当前专利权人地址: JP Kawasaki
- 优先权: JP101663/2004 20040331
- 主分类号: H01L21/76
- IPC分类号: H01L21/76 ; H01L21/762 ; H01L21/8247 ; H01L27/115 ; H01L29/788 ; H01L29/792
摘要:
In a method of manufacturing a semiconductor device with a shallow trench isolation structure, trenches are formed to extend into a semiconductor substrate. Subsequently, a first insulating film is formed to fill the trenches and to cover a whole surface of the semiconductor substrate, and then a first chemical mechanical polishing (CMP) method is carried out to remove the first insulating film such that the first insulating film is left only in the trenches. Subsequently, a second insulating film is formed to fill the trenches and to cover a whole surface of the semiconductor substrate, and a second CMP method is carried out to remove the second insulating film such that the second insulating film is left only in the trenches.