- 专利标题: Use of a U-groove as an alternative to using a V-groove for protection against dicing induced damage in silicon
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申请号: US11136785申请日: 2005-05-25
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公开(公告)号: US20050221585A1公开(公告)日: 2005-10-06
- 发明人: Alain Perregaux , Paul Hosier , Josef Jedlicka , Nicholas Salatino , Jagdish Tandon
- 申请人: Alain Perregaux , Paul Hosier , Josef Jedlicka , Nicholas Salatino , Jagdish Tandon
- 专利权人: Xerox Corporation
- 当前专利权人: Xerox Corporation
- 主分类号: B28D5/02
- IPC分类号: B28D5/02 ; H01L21/301 ; H01L21/3065 ; H01L21/461 ; H01L21/78
摘要:
The present disclosure relates that by modifying chip die dicing methodology to a U-groove profile from a V-groove profile by modifying the second etch step to be a dry etch instead of a wet etch results in a direct cost savings by eliminating a more expensive process step, as well as the need for stripping the developed photoresist layer. Furthermore, going to a U-groove profile accomplishes additional indirect and greater cost savings resulting from increased process throughput, improved yield, and reduced metal layer defects.
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