发明申请
- 专利标题： Manufacturing method of silicon wafer
- 专利标题（中）： 硅晶片的制造方法
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申请号： US10524778申请日： 2003-12-19
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公开(公告)号： US20050229842A1公开(公告)日： 2005-10-20
- 发明人: Shigeru Umeno , Masakata Hourai , Masakazu Sano , Shinichiro Miki
- 申请人： Shigeru Umeno , Masakata Hourai , Masakazu Sano , Shinichiro Miki
- 国际申请： PCT/JP03/16441 WO 20031219
- 主分类号： C30B29/06
- IPC分类号： C30B29/06 ; C30B33/00 ; H01L21/26 ; H01L21/322 ; H01L21/324 ; H01L21/762
摘要：
An active layer side silicon wafer is heat-treated in an oxidizing atmosphere to thereby form a buried oxide film therein. The active layer side silicon wafer is then bonded to a supporting side wafer with said buried oxide film interposed therebetween thus to fabricate an SOI wafer. Said oxidizing heat treatment is carried out under a condition satisfying the following formula: [Oi]≦2.123×1021exp(−1.035/k(T+273)), where, T is a temperature of the heat treatment, and [Oi] (atmos/cm3) is an interstitial oxygen concentration.
公开/授权文献
- US07563319B2 Manufacturing method of silicon wafer 公开/授权日：2009-07-21
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