发明申请
- 专利标题: ADHERING LAYERS TO METALS WITH DIELECTRIC ADHESIVE LAYERS
- 专利标题(中): 用电介质粘合层将金属层附着在金属层上
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申请号: US10341777申请日: 2003-01-14
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公开(公告)号: US20050230784A1公开(公告)日: 2005-10-20
- 发明人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Lay-Lay Chua
- 申请人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Lay-Lay Chua
- 申请人地址: US NJ Murray Hill
- 专利权人: Lucent Technologies Inc.
- 当前专利权人: Lucent Technologies Inc.
- 当前专利权人地址: US NJ Murray Hill
- 主分类号: G02B6/10
- IPC分类号: G02B6/10 ; G02B6/12 ; G02B6/122 ; G02B6/26 ; H01L29/00 ; H01L27/102
摘要:
The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.
公开/授权文献
- US06989579B2 Adhering layers to metals with dielectric adhesive layers 公开/授权日:2006-01-24