发明申请
- 专利标题： Semiconductor thin film forming method and semiconductor device
- 专利标题（中）： 半导体薄膜形成方法和半导体器件
-
申请号： US11167320申请日： 2005-06-28
-
公开(公告)号： US20050236692A1公开(公告)日： 2005-10-27
- 发明人: Akito Hara , Nobuo Sasaki
- 申请人： Akito Hara , Nobuo Sasaki
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 优先权： JP10-197316/1998 19980713; JP10-346879/1998 19981207; JP11-245323/1999 19990831; JP2000-178578/2000 20000614
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L29/04 ; H01L29/786 ; H01L31/107
摘要：
A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.
公开/授权文献
信息查询
IPC分类:
