发明申请
US20050239241A1 High speed lateral heterojunction MISFETS realized by 2-dimensional bandgap engineering and methods thereof
有权
通过二维带隙工程实现的高速横向异质结MISFETS及其方法
- 专利标题： High speed lateral heterojunction MISFETS realized by 2-dimensional bandgap engineering and methods thereof
- 专利标题（中）： 通过二维带隙工程实现的高速横向异质结MISFETS及其方法
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申请号： US11158726申请日： 2005-06-22
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公开(公告)号： US20050239241A1公开(公告)日： 2005-10-27
- 发明人: Qiqing Ouyang , Jack Chu
- 申请人： Qiqing Ouyang , Jack Chu
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8238 ; H01L29/165 ; H01L29/80 ; H01L21/336
摘要：
A method for forming and the structure of a strained lateral channel of a field effect transistor, a field effect transistor and CMOS circuitry is described incorporating a drain, body and source region on a single crystal semiconductor substrate wherein a hetero-junction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect the body region. The invention reduces the problem of leakage current from the source region via the hetero-junction and lattice strain while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials and alloy composition.
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