发明申请
- 专利标题: POST TREATMENT OF LOW K DIELECTRIC FILMS
- 专利标题(中): 低K电介质膜的后处理
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申请号: US10830203申请日: 2004-04-21
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公开(公告)号: US20050239293A1公开(公告)日: 2005-10-27
- 发明人: Zhenjiang Cui , Josephine Chang , Alexandros Demos , Reza Arghavani , Derek Witty , Helen Armer , Girish Dixit , Hichem M'Saad
- 申请人: Zhenjiang Cui , Josephine Chang , Alexandros Demos , Reza Arghavani , Derek Witty , Helen Armer , Girish Dixit , Hichem M'Saad
- 主分类号: H01L21/314
- IPC分类号: H01L21/314 ; H01L21/316 ; H01L21/4763 ; H01L21/26 ; H01L21/31 ; H01L21/324 ; H01L21/42 ; H01L21/469 ; H01L21/477
摘要:
A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.
公开/授权文献
- US07018941B2 Post treatment of low k dielectric films 公开/授权日:2006-03-28