发明申请
US20050244729A1 Method of measuring the overlay accuracy of a multi-exposure process
审中-公开
测量多曝光过程的重叠精度的方法
- 专利标题： Method of measuring the overlay accuracy of a multi-exposure process
- 专利标题（中）： 测量多曝光过程的重叠精度的方法
-
申请号： US10834117申请日： 2004-04-29
-
公开(公告)号： US20050244729A1公开(公告)日： 2005-11-03
- 发明人: George Liu , Vencent Chang , Chia-Chen Chen
- 申请人： George Liu , Vencent Chang , Chia-Chen Chen
- 申请人地址： TW Hsin-Chu City
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsin-Chu City
- 主分类号： G03C5/00
- IPC分类号： G03C5/00 ; G03F7/20 ; G03F9/00 ; H01L23/544 ; H01L23/58 ; H01L29/10
摘要：
A method of measuring the overlay accuracy of a multi-exposure process is provided. The characteristic of this invention is utilizing a scanning electron microscope for monitoring the overlay accuracy real-time during the multi-exposure processes in stead of the conventional optical measurement method.
信息查询
