发明申请
- 专利标题: Method for repairing a phase shift mask
- 专利标题(中): 修复相移掩模的方法
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申请号: US10841186申请日: 2004-05-07
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公开(公告)号: US20050247669A1公开(公告)日: 2005-11-10
- 发明人: Hung-Chun Wang , Ming-Chih Hsieh , Han-Lin Wu
- 申请人: Hung-Chun Wang , Ming-Chih Hsieh , Han-Lin Wu
- 主分类号: G01L21/30
- IPC分类号: G01L21/30 ; G03F1/00 ; G03F9/00 ; H01L21/302
摘要:
A method is disclosed for repairing an attenuated phase shift mask. The mask initially has a mask substrate coated with a predetermined shift layer material, a mask pattern layer, and an energy beam resist layer sequentially. After forming a predetermined mask pattern in the mask pattern layer through an energy beam resist layer, the mask is inspected for detecting at least one missing pattern in the mask pattern layer. The predetermined mask pattern is repaired in a predetermined defect area for correcting the missing pattern. After the missing pattern is reformed. The predetermined mask pattern is transferred in the shift layer material.
公开/授权文献
- US07348106B2 Method for repairing a phase shift mask 公开/授权日:2008-03-25
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