发明申请
- 专利标题： Semiconductor device and method for fabrication thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11125111申请日： 2005-05-10
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公开(公告)号： US20050250234A1公开(公告)日： 2005-11-10
- 发明人: Takeshi Kamikawa , Eiji Yamada , Masahiro Araki
- 申请人： Takeshi Kamikawa , Eiji Yamada , Masahiro Araki
- 申请人地址： JP Osaka-shi
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka-shi
- 优先权： JP2004-139919 20040510; JP2004-172291 20040610
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L33/20 ; H01L33/24 ; H01L33/32 ; H01S5/02 ; H01S5/22 ; H01S5/223 ; H01S5/323
摘要：
On a processed substrate having an engraved region as a depressed portion formed thereon, a nitride semiconductor thin film is laid. The sectional area occupied by the nitride semiconductor thin film filling the depressed portion is 0.8 times the sectional area of the depressed portion or less.
公开/授权文献
- US07157297B2 Method for fabrication of semiconductor device 公开/授权日：2007-01-02