发明申请
US20050250316A1 Methods for fabricating memory devices using sacrifical layers and memory devices fabricated by same
失效
用于制造使用牺牲层的存储器件和由其制造的存储器件的方法
- 专利标题： Methods for fabricating memory devices using sacrifical layers and memory devices fabricated by same
- 专利标题（中）： 用于制造使用牺牲层的存储器件和由其制造的存储器件的方法
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申请号： US11168894申请日： 2005-06-29
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公开(公告)号： US20050250316A1公开(公告)日： 2005-11-10
- 发明人: Suk-Hun Choi , Chang-Ki Hong , Yoon-Ho Son
- 申请人： Suk-Hun Choi , Chang-Ki Hong , Yoon-Ho Son
- 优先权： KR2003-90874 20031212; KR2004-22720 20040401; KR2004-56125 20040719
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/44 ; H01L21/4763 ; H01L21/768 ; H01L27/24
摘要：
Methods are provided for fabricating contacts in integrated circuit devices, such as phase-change memories. A protection layer and a sacrificial layer are sequentially formed on a semiconductor substrate. A contact hole is formed through the sacrificial layer and the protection layer. A conductive layer is formed on the sacrificial layer and in the contact hole, and portions of the conductive layer and the sacrificial layer are removed to expose the protection layer and form a conductive plug protruding from the protection layer. A protruding portion of the conductive plug removed to leave a contact plug in the protection layer. A phase-change data storage element may be formed on the contact plug.
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