发明申请
US20050253129A1 Light emitting diode with enhanced luminance and method for manufacturing the same
审中-公开
具有增强亮度的发光二极管及其制造方法
- 专利标题: Light emitting diode with enhanced luminance and method for manufacturing the same
- 专利标题(中): 具有增强亮度的发光二极管及其制造方法
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申请号: US10949456申请日: 2004-09-23
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公开(公告)号: US20050253129A1公开(公告)日: 2005-11-17
- 发明人: Tzong-Liang Tsai , Chih-Sung Chang , Wei-Chih Wen , Tzer-Perng Chen
- 申请人: Tzong-Liang Tsai , Chih-Sung Chang , Wei-Chih Wen , Tzer-Perng Chen
- 优先权: TW93113437 20040513
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L33/00 ; H01L33/46
摘要:
A light emitting diode with enhanced luminance and a method for manufacturing the light emitting diode are provided. The light emitting diode includes a substrate, a passivation layer including a material selected from a group consisting of a metal alloy, a metal oxide, a metal nitride, organic materials, inorganic materials and a combination thereof, a reflection layer, a first semiconductor layer, a multi-layer quantum well structure and a second semiconductor layer. The substrate possesses excellent electric/thermal conductivities.
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