发明申请
US20050255669A1 Semiconductor device including isolation trench and method for fabricating the same
审中-公开
包括隔离沟槽的半导体器件及其制造方法
- 专利标题： Semiconductor device including isolation trench and method for fabricating the same
- 专利标题（中）： 包括隔离沟槽的半导体器件及其制造方法
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申请号： US11095569申请日： 2005-04-01
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公开(公告)号： US20050255669A1公开(公告)日： 2005-11-17
- 发明人: Sung-taeg Kang , Jeong-uk Han , Sung-woo Park
- 申请人： Sung-taeg Kang , Jeong-uk Han , Sung-woo Park
- 优先权： KR2004-33070 20040511
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; B81C1/00 ; H01L21/762 ; H01L21/8234
摘要：
Provided is a trench isolation for a semiconductor device. The device includes an insulating layer formed on the inner surface of a trench and includes at least an N-containing CVD oxide layer, and a nitride liner formed on the insulating layer.
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