发明申请
- 专利标题： Adhering layers to metals with dielectric adhesive layers
- 专利标题（中）： 将金属层粘附到具有介电粘合剂层的金属上
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申请号： US11184232申请日： 2005-07-19
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公开(公告)号： US20050255692A1公开(公告)日： 2005-11-17
- 发明人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Lay-Lay Chua
- 申请人： Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Lay-Lay Chua
- 申请人地址： US NJ Murray Hill
- 专利权人： Lucent Technologies Inc.
- 当前专利权人： Lucent Technologies Inc.
- 当前专利权人地址： US NJ Murray Hill
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/316 ; H01L21/318 ; H01L21/4763
摘要：
The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.
公开/授权文献
- US07514359B2 Adhering layers to metals with dielectric adhesive layers 公开/授权日：2009-04-07