发明申请
US20050256600A1 Electron beam lithography system, method of electron beam lithography, program and method for manufacturing a semiconductor device with direct writing
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电子束光刻系统，电子束光刻方法，用于制造具有直接写入的半导体器件的程序和方法
- 专利标题： Electron beam lithography system, method of electron beam lithography, program and method for manufacturing a semiconductor device with direct writing
- 专利标题（中）： 电子束光刻系统，电子束光刻方法，用于制造具有直接写入的半导体器件的程序和方法
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申请号： US11097357申请日： 2005-04-04
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公开(公告)号： US20050256600A1公开(公告)日： 2005-11-17
- 发明人: Tetsuro Nakasugi
- 申请人： Tetsuro Nakasugi
- 优先权： JPP2004-111291 20040405
- 主分类号： H01J37/305
- IPC分类号： H01J37/305 ; G03B7/20 ; H01J37/00 ; H01J37/317 ; H01L21/027 ; G06F19/00
摘要：
An electron beam lithography system includes: a lithography tool writing patterns onto substrates, which are classified into lots, respectively, using sequentially apertures through which electron beams, based on a specific processing procedures; an aperture manager managing the apertures; a request obtaining module obtaining processing requests of the lots; a processing procedure storing file storing processing procedures; a processing time calculating module calculating corresponding processing times of the lots using the apertures based on corresponding processing procedures defined for each of the lots; and an order deciding module deciding an order of processing the lots based on the processing times.
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