发明申请
- 专利标题: Image pick-up apparatus and manufacturing method thereof, radiation image pick-up apparatus, and radiation image pick-up system
- 专利标题(中): 摄像装置及其制造方法,放射线摄像装置和放射线摄像系统
-
申请号: US10954194申请日: 2004-10-01
-
公开(公告)号: US20050263709A1公开(公告)日: 2005-12-01
- 发明人: Minoru Watanabe , Masakazu Morishita , Chiori Mochizuki , Keiichi Nomura , Takamasa Ishii
- 申请人: Minoru Watanabe , Masakazu Morishita , Chiori Mochizuki , Keiichi Nomura , Takamasa Ishii
- 申请人地址: JP Tokyo
- 专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2003-344560 20031002; JP2004-175558 20040614
- 主分类号: G01T1/20
- IPC分类号: G01T1/20 ; A61B6/00 ; G01T1/24 ; H01L27/14 ; H01L27/146 ; H01L31/036 ; H04N5/32
摘要:
In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.
公开/授权文献
信息查询