发明申请
- 专利标题： Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure
- 专利标题（中）： 包括应力敏感元件的半导体结构和测量半导体结构中的应力的方法
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申请号： US11058706申请日： 2005-02-15
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公开(公告)号： US20050263760A1公开(公告)日： 2005-12-01
- 发明人: Eckhard Langer , Ehrenfried Zschech
- 申请人： Eckhard Langer , Ehrenfried Zschech
- 优先权： DE102004026145.8 20040528
- 主分类号： G01L5/00
- IPC分类号： G01L5/00 ; H01L21/66 ; H01L23/544 ; H01L29/84
摘要：
A semiconductor structure comprises a stress sensitive element. A property of the stress sensitive element is representative of a stress in the semiconductor structure. Additionally, the semiconductor structure may comprise an electrical element. The stress sensitive element and the electrical element comprise portions of a common layer structure. Analyzers may be adapted to determine a property of the stress sensitive element being representative of a stress in the semiconductor structure and a property of the electrical element. The property of the stress sensitive element may be determined and the manufacturing process may be modified based on the determined property of the stress sensitive element. The property of the electrical element may be related to the property of the stress sensitive element in order to investigate an influence of stress on the electrical element.
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