发明申请
- 专利标题: Magneto-resistive element, magnetic head and megnetic storage apparatus
- 专利标题(中): 磁阻元件,磁头和储能装置
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申请号: US11137008申请日: 2005-05-25
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公开(公告)号: US20050264953A1公开(公告)日: 2005-12-01
- 发明人: Hirotaka Oshima , Reiko Kondo , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
- 申请人: Hirotaka Oshima , Reiko Kondo , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
- 申请人地址: JP Kawasaki-shi
- 专利权人: FUJITSU LIMITED
- 当前专利权人: FUJITSU LIMITED
- 当前专利权人地址: JP Kawasaki-shi
- 优先权: JP2004-159590 20040528; JP2005-067898 20050310
- 主分类号: G11B5/127
- IPC分类号: G11B5/127 ; G11B5/33 ; G11B5/39 ; H01F10/14 ; H01F10/20 ; H01F10/32
摘要:
A magneto-resistive element employs a CPP structure and includes an antiferromagnetic layer, a pinned magnetization layer, a nonmagnetic intermediate layer and a free magnetization layer that are successively stacked. The pinned magnetization layer includes a first pinned magnetization layer, a nonmagnetic coupling layer and a second pinned magnetization layer that are successively stacked on the antiferromagnetic layer, and the first and second pinned magnetization layers are antiferromagnetically exchange-coupled. One of the first and second pinned magnetization layer is formed by a ferromagnetic layer made of a ferromagnetic material at least including one element or alloy selected from a group consisting of Co, Fe, Ni and alloys thereof, and the other is formed by a resistance control layer made of a conductive ferromagnetic oxide.
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