- 专利标题: Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
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申请号: US11180415申请日: 2005-07-13
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公开(公告)号: US20050266627A1公开(公告)日: 2005-12-01
- 发明人: Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Peter Mitchell , Larry Nesbit
- 申请人: Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Peter Mitchell , Larry Nesbit
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/78
- IPC分类号: H01L21/78 ; H01L27/28 ; H01L51/30 ; H01L21/336
摘要:
Vertical field effect transistors having a channel region defined by at least one semiconducting nanotube and methods for fabricating such vertical field effect transistors by chemical vapor deposition using a spacer-defined channel. Each nanotube is grown by chemical vapor deposition catalyzed by a catalyst pad positioned at the base of a high-aspect-ratio passage defined between a spacer and a gate electrode. Each nanotube grows in the passage with a vertical orientation constrained by the confining presence of the spacer. A gap may be provided in the base of the spacer remote from the mouth of the passage. Reactants flowing through the gap to the catalyst pad participate in nanotube growth.