Invention Application
US20050269292A1 Plasma processing apparatus and method, and electrode plate for plasma processing apparatus
有权
等离子体处理装置和方法以及等离子体处理装置的电极板
- Patent Title: Plasma processing apparatus and method, and electrode plate for plasma processing apparatus
- Patent Title (中): 等离子体处理装置和方法以及等离子体处理装置的电极板
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Application No.: US11137492Application Date: 2005-05-26
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Publication No.: US20050269292A1Publication Date: 2005-12-08
- Inventor: Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
- Applicant: Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
- Priority: JP2002-341949 20021126; JP2003-358417 20031017
- Main IPC: H05H1/46
- IPC: H05H1/46 ; B01J3/00 ; B01J19/08 ; C23F1/00 ; H01J37/32 ; H01L21/304 ; H01L21/306 ; H01L21/3065

Abstract:
A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.
Public/Granted literature
- US07494561B2 Plasma processing apparatus and method, and electrode plate for plasma processing apparatus Public/Granted day:2009-02-24
Information query
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