发明申请
- 专利标题： Reading circuit for reading a memory cell
- 专利标题（中）： 用于读取存储单元的读取电路
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申请号： US10503459申请日： 2003-01-20
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公开(公告)号： US20050270833A1公开(公告)日： 2005-12-08
- 发明人: Evert Seevinck , Alain Thijs , Patrick Van De Steeg , Maurits Storms
- 申请人： Evert Seevinck , Alain Thijs , Patrick Van De Steeg , Maurits Storms
- 专利权人： Koninklijke Philips Electronics N.V.
- 当前专利权人： Koninklijke Philips Electronics N.V.
- 优先权： EP02075495.8 20020206
- 国际申请： PCT/IB03/00119 WO 20030120
- 主分类号： G11C17/18
- IPC分类号： G11C17/18 ; G11C7/06 ; G11C11/409 ; G11C11/419 ; G11C16/28 ; G11C11/34
摘要：
A reading circuit comprises a first and second cascode circuit and a first and second current mirror. The first cascode circuit can connected to a bit line of a memory cell and the second cascode circuit can be connected to a reference bit line of a reference cell. The first output terminals of the first and second cascode circuits are connected to first terminals of the first and second current mirrors, respectively. The second output terminals of the first and second cascode circuits are connected to the second terminals of the second and first current mirrors, respectively. A tri-state buffer is coupled between the second terminals of the first and second current mirrors said buffer having bit invert capabilities.
公开/授权文献
- US07038936B2 Reading circuit for reading a memory cell 公开/授权日：2006-05-02
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