发明申请
- 专利标题: Resist pattern forming apparatus and method thereof
- 专利标题(中): 抗蚀剂图案形成装置及其方法
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申请号: US11199215申请日: 2005-08-09
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公开(公告)号: US20050271382A1公开(公告)日: 2005-12-08
- 发明人: Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
- 申请人: Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 优先权: JP2000-296759 20000928
- 主分类号: G03F7/16
- IPC分类号: G03F7/16 ; B05C11/00 ; B05C11/08 ; B05D1/40 ; B05D3/00 ; G03F7/20 ; G03F7/30 ; H01L21/00 ; H01L21/027 ; G03C5/00
摘要:
A resist pattern forming apparatus comprising a controller having a controlling portion that controls a processing of a coating and developing apparatus with a coating unit and a developing unit being provided therewith and an aligner being connected thereto, while an inspecting portion and the like measures at least one of a plurality of measurement items selected from, a reflection ratio and a film thickness of a base film and a resist film, a line width after the development, an accuracy that the base film matches with a resist pattern, a defect after the development, and so on. The measured data is transmitted to the controller. At the controller, a parameter subject to an amendment is selected based on the corresponding data of each of the measurement item such as the film thickness of the resist and the line width after the development, and the amendment of the parameters subject to the amendment is performed. As a result, the amending operation is facilitated by a reduced workload of an operator and in the same time, the appropriate amendment can be performed.
公开/授权文献
- US07488127B2 Resist pattern forming apparatus and method thereof 公开/授权日:2009-02-10